Study of photocatalyst magnesium aluminate spinel nanoparticles

In-situ Fabrication of Transparent Magnesium Aluminate Spinel by Spark Plasma Sintering

Transparent polycrystalline spinel ceramic was fabricated without any sintering aids by spark plasma sintering method of a mixture of Al2O3 and MgO powders for only 10min soak at 1250°C. Densification, microstructure and optical transparency of spinel were examined. The spinel exhibits an in-line transmission of 55% for a visible-wavelength of 470nm and high hardness value of 2040 HV.

Evaluation of IKTS Transparent Polycrystalline Magnesium Aluminate Spinel (MgAl2O4) for Armor and Infrared Dome/Window Applications

Creep of Polycrystalline Magnesium Aluminate Spinel Studied by an SPS Apparatus

A spark plasma sintering (SPS) apparatus was used for the first time as an analytical testing tool for studying creep in ceramics at elevated temperatures. Compression creep experiments on a fine-grained (250 nm) polycrystalline magnesium aluminate spinel were successfully performed in the 1100-1200 °C temperature range, under an applied stress of 120-200 MPa. It was found that the stress expon...

Flotation Behaviors of Perovskite, Titanaugite, and Magnesium Aluminate Spinel Using Octyl Hydroxamic Acid as the Collector

The flotation behaviors of perovskite, titanaugite, and magnesium aluminate spinel (MA-spinel), using octyl hydroxamic acid (OHA) as the collector, were investigated using microflotation experiments, zeta-potential measurements, Fourier transform infrared (FT-IR) analyses, X-ray photoelectron spectroscopy (XPS) analyses, and flotation experiments on artificially mixed minerals. The microflotati...

Electronic structure of spinel oxides: zinc aluminate and zinc gallate

The electronic structure of zinc aluminate (ZnAl2O4) and that of zinc gallate (ZnGa2O4) were studied by the self-consistent tight-binding linearized muffin-tin orbital method with the atomic sphere approximation. The calculated results predict these zinc-based spinel oxides to be direct-gap materials. The direct gap at 0 is found to be 4.11 eV for ZnAl2O4 and 2.79 eV for ZnGa2O4. With reference...